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Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

Ching-Wen Chang1,2,3, Paritosh V Wadekar1, Hui-Chun Huang4

  • 1Department of Physics and Center of Crystal Research, National Sun Yat-Sen University, Kaohsiung, 80424, Taiwan, Republic of China.

Nanoscale Research Letters
|August 21, 2020
PubMed

Keywords:
III-nitrideLight trappingNanorodPhotovoltaic devicePlasma-assisted molecular beam epitaxySolar cell

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