Related Experiment Video
Updated: Dec 11, 2025

A Fabrication and Measurement Method for a Flexible Ferroelectric Element Based on Van Der Waals Heteroepitaxy
Published on: April 8, 2018
Photovoltaic Control of Ferromagnetism for Flexible Spintronics
Shishun Zhao1, Yifan Zhao1, Bian Tian2
1Ministry Education Key Laboratory of Electronic Materials Research Laboratory, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, the International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi 'an Jiaotong University, Xi'an 710049, China.
Abstract:
The demand for low-power flexible spintronics for sensing, communicating, and data processing applications boosts an intense search for novel ways of controlling magnetism. In this work, a photovoltaic controllable flexible spintronic device within a Kapton/Ta/Co/(PC71BM/PTB7-Th)/Pt heterostructure was demonstrated, and the magnetic anisotropy change of this flexible heterostructure as a function of the external light radiation and strain was quantitatively determined. 150 mW/cm2 white light illumination induced 489 Oe out-of-plane ferromagnetic resonance field modulation, which was attributed to the photogenerated electron doping in the cobalt film. The chemical contamination effect and the interfacial oxidation effect during the photovoltaic doping process were eliminated. Moreover, it was found that the working function of the thin-film electrodes were different from the bulk values via an ultraviolet photoelectron spectroscopy test. Our results on flexible photovoltaic spintronics systems will invigorate the research toward the development of solar-driven energy-efficient spintronics.
More Related Videos
Related Concept Videos
Ferromagnetism
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Valence Bond Theory
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...

