MoS₂ /Polymer Heterostructures Enabling Stable Resistive Switching and Multistate Randomness.

Area of Science:

• Materials Science
• Solid-State Electronics
• Cybersecurity

Background:

• Resistive random-access memories (ReRAMs) are explored for physical random number generation (RNG).
• ReRAM devices often suffer from cycle-to-cycle performance degradation, hindering stable random number generation.
• Maintaining a normal probability distribution in ReRAM operation is a significant challenge.

Purpose of the Study:

• To develop highly stable ReRAM devices for reliable random number generation.
• To investigate the use of MoS2/polymer heterostructures for enhanced ReRAM stability.
• To demonstrate the potential of these ReRAMs as a robust RNG source for cybersecurity.

Main Methods:

• Fabrication of ReRAM devices utilizing a MoS2/polymer heterostructure as the active layer.
• Evaluation of device stability through cumulative probability analysis of high- and low-resistivity states.
• Assessment of randomness using Chi-square tests on the high-resistivity state values.

Main Results:

• ReRAM devices exhibited excellent stability with consistent cumulative probabilities for both resistance states.
• The high-resistivity state demonstrated intrinsic randomness, validated by Chi-square testing.
• A single ReRAM cell generated ten distinct random states, surpassing conventional binary cells.

Conclusions:

• MoS2/polymer heterostructures significantly enhance ReRAM stability for RNG applications.
• These stable ReRAMs provide a reliable and high-capacity source of randomness.
• The scalable interface engineering process enables high-performance ReRAMs for enhanced cybersecurity in the big data era.