Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Three-dimensional absorber correction for EUV mask defect compensation.

Optics express·2026
Same author

High-efficiency EUV mask defect compensation method based on the pixelated absorber layer correction.

Optics express·2025
Same author

Synthetic holographic mask design for computational proximity lithography using the lithography-guided OMRAF method.

Optics express·2025
Same author

Accelerating polymer self-consistent field simulation and inverse DSA-lithography with deep neural networks.

The Journal of chemical physics·2025
Same author

Effects and elimination of image grating defocusing on a double-Ronchi shearing interference field.

Applied optics·2023
Same author

Rigorous simulation model of double-Ronchi shearing interferometry on lithographic tools.

Applied optics·2023

Related Experiment Video

Updated: Dec 9, 2025

Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices
10:18

Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices

Published on: January 27, 2017

14.9K

Fast rigorous mask model for extreme ultraviolet lithography.

Zinan Zhang, Sikun Li, Xiangzhao Wang

    Applied Optics
    |September 9, 2020
    PubMed
    Summary

    A new fast rigorous model accurately calculates extreme ultraviolet (EUV) mask diffraction spectra for EUV lithography simulation. This advanced EUV mask model significantly reduces critical dimension errors in lithography patterning.

    Area of Science:

    • Optics and Photonics
    • Semiconductor Manufacturing
    • Computational Physics

    Background:

    • Accurate simulation of extreme ultraviolet (EUV) mask diffraction spectra is crucial for advancing EUV lithography.
    • Existing methods face challenges in balancing speed and accuracy for complex mask structures.

    Purpose of the Study:

    • To develop a fast and rigorous computational model for EUV mask diffraction spectrum calculation.
    • To improve the accuracy of critical dimension (CD) prediction in EUV lithography simulations.

    Main Methods:

    • Proposed a novel fast rigorous EUV mask model based on mask structure decomposition.
    • Analyzed region and boundary diffraction of the absorber concerning incident and diffraction angles.
    • Established frequency-domain functions to model geometrical and boundary diffraction.

    More Related Videos

    Microfluidic Fabrication Techniques for High-Pressure Testing of Microscale Supercritical CO2 Foam Transport in Fractured Unconventional Reservoirs
    10:06

    Microfluidic Fabrication Techniques for High-Pressure Testing of Microscale Supercritical CO2 Foam Transport in Fractured Unconventional Reservoirs

    Published on: July 2, 2020

    7.2K
    Demonstration of a Hyperlens-integrated Microscope and Super-resolution Imaging
    10:01

    Demonstration of a Hyperlens-integrated Microscope and Super-resolution Imaging

    Published on: September 8, 2017

    8.1K

    Related Experiment Videos

    Last Updated: Dec 9, 2025

    Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices
    10:18

    Multi-step Variable Height Photolithography for Valved Multilayer Microfluidic Devices

    Published on: January 27, 2017

    14.9K
    Microfluidic Fabrication Techniques for High-Pressure Testing of Microscale Supercritical CO2 Foam Transport in Fractured Unconventional Reservoirs
    10:06

    Microfluidic Fabrication Techniques for High-Pressure Testing of Microscale Supercritical CO2 Foam Transport in Fractured Unconventional Reservoirs

    Published on: July 2, 2020

    7.2K
    Demonstration of a Hyperlens-integrated Microscope and Super-resolution Imaging
    10:01

    Demonstration of a Hyperlens-integrated Microscope and Super-resolution Imaging

    Published on: September 8, 2017

    8.1K
  • Integrated an equivalent layer multilayer model (Fresnel formula) with an accurate absorber model.

    • Main Results:

    • The proposed model demonstrates effectiveness in fast and accurate EUV mask diffraction spectrum calculation.
    • Achieved significant reductions in critical dimension (CD) calculation errors for 14 nm line-space patterns: 80.6% for dense and 93.9% for isolate features compared to the structure decomposition method.

    Conclusions:

    • The developed fast rigorous EUV mask model offers a substantial improvement in accuracy and efficiency for EUV lithography simulations.
    • This model provides a valuable tool for optimizing EUV mask design and enhancing lithographic process control.