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Wafer-scale graphene-ferroelectric HfO2/Ge-HfO2/HfO2 transistors acting as three-terminal memristors

M Dragoman1, A Dinescu1, D Dragoman2,3

  • 1National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126 A, Voluntari 077190, Romania.

Nanotechnology
|September 18, 2020
PubMed

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