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Updated: May 27, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Field-effect transistors based on nickel oxide doped with nitrogen semiconductor ferroelectrics for ultralow voltage

S Vulpe1, M Dragoman1, M Aldrigo1

  • 1National Institute for Research and Development in Microtechnologies (IMT), Str. Erou Iancu Nicolae 126A, Voluntari (Ilfov), Romania.

Nanotechnology
|February 18, 2025
PubMed

Keywords:
nickel oxidenitrogen dopingsemiconductor ferroelectricstransistors

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