Related Experiment Video
Updated: May 10, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Electric-Field-Induced Metal-Insulator Transition for Low-Power and Ultrafast Nanoelectronics
Mircea Dragoman1, Daniela Dragoman2,3, Mircea Modreanu4
1National Institute for Research and Development in Microtechnologies, Str. Erou Iancu Nicolae 126A, 077190 Voluntari, Romania.
Abstract:
We present here a comprehensive review of various classes of electric-field-induced reversible Mott metal-insulator materials, which have many applications in ultrafast switches, reconfigurable high-frequency devices up to THz, and photonics. Various types of Mott transistors are analyzed, and their applications are discussed. This paper introduces new materials that demonstrate the Mott transition at very low DC voltage levels, induced by an external electric field. The final section of the paper examines ferroelectric Mott transistors and these innovative ferroelectric Mott materials.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Field Effect Transistor
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

