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Updated: Dec 8, 2025

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
Published on: June 23, 2018
MoS2/pentacene hybrid complementary inverter based photodetector with amplified voltage-output
Fengjing Liu1,2, Yiwei Zhang3, Jiawei Wang4
1CAS Key Laboratory of Standardization and Measurement for Nanotechnology & CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China.
Abstract:
A sensitive photodetection based on a novel hybrid CMOS inverter has been demonstrated. Unlike common photo-current type photodetectors, which convert optical signals to current, the CMOS inverter realizes voltage-output, overcoming the difficulty to monitor current signal in the range of nA. The hybrid CMOS logic inverter employs n-channel MoS2 nanosheet/perovskite heterojunction FET and p-channel organic pentacene FET in a planar architecture. In order to obtain high performance, we adopt the interdigital electrodes for the pentacene FET to enhance the current density of the p-channel, and stack perovskite on the MoS2 channel to modify the threshold voltage of the n-channel. As a result, a CMOS inverter with a voltage gain of more than ten is obtained. When VIN is around the transition voltage (-38 V), the inverter can obtain stable optical detection signal, the VOUT changes from 6 V in dark to 1 V under 633 nm light exposure. This finding indicates the potential to fabricate visible light detecting devices with voltage-output based on the inverter and may be further applicable for a photo-logic circuit.
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