Recyclable free-polymer transfer of nano-grain MoS₂ film onto arbitrary substrates

Clean transfer of transition metal dichalcogenides (TMDs) film is highly desirable, as intrinsic properties of TMDs may be degraded in a conventional wet transfer process using a polymer-based resist and toxic chemical solvent. Residues from the resists often remain on the transferred TMDs, thereby causing a significant variation in their electrical and optical characteristics. Therefore, an alternative to the conventional wet transfer method is needed-one in which no residue is left behind. Herein, we report that our molybdenum disulfide (MoS₂) films synthesized by plasma-enhanced chemical vapor deposition can be easily transferred onto arbitrary substrates (such as SiO₂/Si, polyimide, fluorine-doped tin oxide, and polyethersulfone) by using water alone, i.e. without residues or chemical solvents. The transferred MoS₂ film retains its original morphology and physical properties, which are investigated by optical microscopy, atomic force microscopy, Raman, x-ray photoelectron spectroscopy, and surface tension analysis. Furthermore, we demonstrate multiple recycling of the resist-free transfer for the nano-grain MoS₂ film. Using the proposed water-assisted and recyclable transfer, MoS₂/p-doped Si wafer photodiode was fabricated, and the opto-electric properties of the photodiode were characterized to demonstrate the feasibility of the proposed method.