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Exclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substrate.
Juan Carlos Moreno-López1, Filippo Fedi1, Giacomo Argentero1
1Faculty of Physics, University of Vienna, 1090 Wien, Austria.
The Journal of Physical Chemistry. C, Nanomaterials and Interfaces
|October 19, 2020
Summary
Atomically flat, nitrogen-doped graphene is synthesized on oxidized copper, avoiding metallic substrates. This novel method yields highly pure, substrate-decoupled graphene with tailored nitrogen doping for advanced electronic applications.
Area of Science:
- Materials Science
- Surface Chemistry
- Condensed Matter Physics
Background:
- Graphene synthesis typically relies on metallic substrates, limiting its electronic properties.
- Achieving controlled nitrogen doping in graphene is crucial for tuning its electronic and chemical behavior.
Purpose of the Study:
- To develop an on-surface synthesis method for atomically flat, nitrogen-doped graphene.
- To achieve direct substrate decoupling and controlled nitrogen incorporation.
Main Methods:
- On-surface synthesis on an oxidized copper substrate.
- Utilizing a purpose-made molecular precursor, dicyanopyrazophenanthroline (C16H6N6).
- Characterization using angle-resolved photoemission spectroscopy.
Main Results:
- Successful synthesis of atomically flat N-doped graphene with ~2.0 at % nitrogen.
- Nitrogen atoms incorporated in a substitutional sp2 configuration.
- Linear energy-momentum dispersion with the Dirac point at the Fermi level.
Conclusions:
- The developed method enables substrate-decoupled, N-doped graphene synthesis.
- Tailored nitrogen functionalization is achievable using specific molecular precursors.
- The resulting N-doped graphene exhibits promising electronic properties for applications.
