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Related Concept Videos

MOSFET Amplifiers01:17

MOSFET Amplifiers

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The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
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Small-Signal Analysis of MOSFET Amplifiers01:23

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In small-signal analysis, a MOSFET transistor amplifier acts as a linear amplifier when operating in its saturation region. The gate-to-source voltage (VGS) of the MOSFET is the sum of the DC biasing voltage and the small time-varying input signal. This combination sets up the operating point and modulates the drain current (ID) that flows from the drain to the source. When a small AC signal is superimposed on the DC bias voltage at the gate, the instantaneous drain current comprises three...
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BJT Amplifiers01:14

BJT Amplifiers

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Bipolar Junction Transistors (BJTs) are pivotal components in amplifier circuits, functioning as voltage-controlled current sources in their active region. This characteristic allows them to efficiently control the collector current through variations in the base-emitter voltage. Essentially, BJTs amplify power due to their ability to take a weak input signal and output a much stronger signal.
In BJT amplifier configurations, particularly in common-emitter setups, the transistor's role...
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Small-Signal Analysis of BJT Amplifiers01:21

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Small signal analysis is a fundamental approach used in electronics to understand how a Bipolar Junction Transistor (BJT) amplifier processes signals. In the active region, the BJT is designed for linear amplification. The transistor's behavior under these conditions is governed by its instantaneous base-emitter voltage VBE, a sum of the DC bias VBE, and a small AC signal VBE, resulting in the collector current iC. Here, the collector current has a DC component and an AC component.
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Fabrication and Characterization of Superconducting Resonators
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A wideband cryogenic microwave low-noise amplifier.

Boris I Ivanov1, Dmitri I Volkhin1, Ilya L Novikov1

  • 1Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk, 630073, Russia.

Beilstein Journal of Nanotechnology
|October 21, 2020
PubMed
Summary

A new low-noise amplifier operates effectively at cryogenic temperatures, offering high gain and low noise for sensitive microwave measurements, including superconducting qubit characterization.

Keywords:
HEMT amplifiercryogenic low-noise amplifierhigh-electron-mobility transistor (HEMT)microwave cryogenic amplifiermicrowave superconducting circuit readoutsuperconducting qubit readout

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Area of Science:

  • Cryogenic Engineering
  • Solid-State Electronics
  • Quantum Computing Hardware

Background:

  • Cryogenic environments are crucial for sensitive measurements, demanding low-noise amplification.
  • High-electron-mobility transistors (HEMTs) offer potential for low-noise amplification at low temperatures.
  • Existing amplifiers may not meet the stringent requirements for advanced cryogenic applications.

Purpose of the Study:

  • To design and characterize a broadband, low-noise, four-stage HEMT amplifier for cryogenic applications.
  • To evaluate the amplifier's performance at a 3.8 K temperature stage within a cryogen-free dilution refrigerator.
  • To demonstrate the amplifier's utility in characterizing superconducting quantum bits (qubits).

Main Methods:

  • Designed a four-stage HEMT amplifier circuit.
  • Characterized the amplifier within a cryogen-free dilution refrigerator at 3.8 K.
  • Measured power dissipation, gain across a frequency range, and equivalent noise temperature.
  • Utilized the amplifier to characterize a superconducting X-mon qubit coupled to a coplanar waveguide resonator.

Main Results:

  • Achieved power dissipation below 20 mW.
  • Obtained a gain exceeding 30 dB in the 6 to 12 GHz frequency range.
  • Demonstrated an equivalent noise temperature below 6 K across the specified frequency range.
  • Successfully applied the amplifier for superconducting qubit characterization.

Conclusions:

  • The developed broadband low-noise amplifier meets critical performance metrics for cryogenic measurements.
  • The amplifier's low noise and high gain make it suitable for various cryogenic microwave applications.
  • The successful characterization of a superconducting qubit validates the amplifier's practical utility in quantum information science.