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Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility

Soo Cheol Kang1, Hyun-Wook Jung1, Sung-Jae Chang1

  • 1DMC Convergence Research Department, Electronics and Telecommunications Research Institute (ETRI), Daejeon 34129, Korea.

Nanomaterials (Basel, Switzerland)
|October 29, 2020
PubMed

Keywords:
AlGaN/GaN HEMTsenhancement-modefluorinated-gaterecessed gate

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