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Tuning Oxide Properties by Oxygen Vacancy Control During Growth and Annealing
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Metal-insulator transition tuned by oxygen vacancy migration across TiO2/VO2 interface.

Qiyang Lu1,2, Changhee Sohn1, Guoxiang Hu3

  • 1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.

Scientific Reports
|October 30, 2020
PubMed
Summary

We controlled metal-insulator transitions in VO2 by migrating oxygen vacancies from a TiO2 layer. This significantly reduced the resistance in the insulating phase, enabling new applications in ionotronics and neuromorphic computing.

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