Red Light-Emitting Diodes with All-Inorganic CsPbI₃/TOPO Composite Nanowires Color Conversion Films

This work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI₃/TOPO composite. High-quality CsPbI₃ quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m² and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI₃/TOPO was 1:0.35.