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Real-time dose control for electron-beam lithography.

Yugu Yang-Keathley1,2, Stephen A Maloney2, J Todd Hastings2

  • 1Department of Electrical and Computer Engineering, Wentworth Institute of Technology, Boston, MA 02115, United States of America.

Nanotechnology
|November 16, 2020
PubMed
Summary
This summary is machine-generated.

Electron-beam lithography dose variations cause patterning issues. This study demonstrates real-time electron dose control by measuring electron arrival at the sample, improving pattern quality and throughput beyond shot noise limits.

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Area of Science:

  • Materials Science and Engineering
  • Nanotechnology
  • Physics

Background:

  • Shot-to-shot dose variation in electron-beam lithography (EBL) is a critical challenge.
  • Dose variations lead to critical dimension variability, edge roughness, and reduced throughput.
  • Existing EBL methods are limited by shot noise, hindering further improvements in pattern quality and speed.

Purpose of the Study:

  • To demonstrate a novel method for real-time feedback control of electron dose in EBL.
  • To improve pattern quality and throughput by overcoming the limitations of shot noise.
  • To establish a foundation for advanced dose control in electron-beam patterning.

Main Methods:

  • Developed a system to measure electron arrival directly at the sample surface during EBL.
  • Implemented a feedback loop utilizing real-time electron detection for dose adjustment.
  • Focused on controlling dose based on detected electrons at the pattern writing location.

Main Results:

  • Successfully demonstrated control of electron dose by measuring electron arrival at the sample.
  • Achieved dose regulation independent of source or column variations.
  • Provided initial evidence for improving EBL performance beyond the inherent shot noise limit.

Conclusions:

  • Real-time electron dose control is achievable by measuring electron arrival at the sample.
  • This approach represents a significant step towards mitigating dose variations in EBL.
  • The demonstrated method has the potential to enhance pattern fidelity and manufacturing efficiency in nanoscale patterning.