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Updated: Nov 28, 2025
20 mJ, 1 ps Yb:YAG Thin-disk Regenerative Amplifier
Published on: July 12, 2017
EuHgGeSe4 and EuHgSnS4: Two Quaternary Eu-Based Infrared Nonlinear Optical Materials with Strong
Wenhao Xing1,2,3, Chunlan Tang2,4, Naizheng Wang1,3
1Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.
Abstract:
Metal chalcogenides play a critical role in the infrared (IR) nonlinear optical (NLO) field. However, Eu-based chalcogenide-type IR NLO materials are still scarce up to now. In this paper, two new quaternary Eu-based chalcogenides, EuHgGeSe4 and EuHgSnS4, containing the "NLO active groups" [HgQ4]6- (Q = S, Se) and [GeSe4]4-/[SnS4]4- were synthesized through traditional high-temperature solid-state reactions. They possess noncentrosymmetric structures, crystallizing in the Ama2 space group, and exhibit strong phase-matchable second-harmonic-generation (SHG) responses (3.1× and 1.77× that of AgGaS2 for EuHgGeSe4 and EuHgSnS4, respectively). Meanwhile, the optical band gaps of EuHgGeSe4 (1.97 eV) and EuHgSnS4 (2.14 eV) were determined from UV-vis-NIR diffuse reflectance spectra. Differential scanning calorimetry (DSC) analyses reveal the congruent-melting behavior of EuHgGeSe4. Furthermore, structural analysis and theoretical calculations verify the critical driving effects of [HgQ4]6- tetrahedra on the strong SHG activity. The overall results demonstrate that EuHgGeSe4 and EuHgSnS4 are potential IR NLO materials.
