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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

677
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
677
Schottky Barrier Diode01:27

Schottky Barrier Diode

701
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

431
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
431

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Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
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Kicking the habit/semiconductor lasers without isolators.

Mark Harfouche, Dongwan Kim, Huolei Wang

    Optics Express
    |December 31, 2020
    PubMed
    Summary
    This summary is machine-generated.

    Semiconductor lasers (SCLs) often suffer coherence collapse due to back reflections, requiring bulky isolators. This study demonstrates a novel SCL design on a Si/III-V platform that significantly enhances reflection tolerance, potentially eliminating the need for external isolators.

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    Area of Science:

    • Photonics
    • Materials Science
    • Electrical Engineering

    Background:

    • Semiconductor lasers (SCLs) are crucial for integrated photonics but are susceptible to coherence degradation from optical back reflections.
    • External Faraday-effect isolators are commonly used to mitigate back reflections but increase cost and size, hindering CMOS-compatible photonic integration.
    • Developing isolator-free SCLs is a significant technological and economic challenge.

    Purpose of the Study:

    • To propose and demonstrate a practical and economic solution to coherence collapse in SCLs caused by optical back reflections.
    • To reduce the reliance of SCLs on external Faraday-effect isolators.
    • To advance CMOS-compatible photonic integrated circuit technology.

    Main Methods:

    • Designed and fabricated SCLs on a heterogeneous Si/III-V platform.
    • Investigated the relationship between internal Q-factors and tolerance to optical reflections.
    • Quantified the reflection tolerance of the novel laser design compared to commercial distributed feedback (DFB) lasers.

    Main Results:

    • Demonstrated an SCL design capable of withstanding 25 dB higher reflected power than commercial DFB lasers.
    • Showcased a laser design that tolerates significant back reflections without coherence collapse.
    • Validated the potential for high internal Q-factors to improve reflection isolation.

    Conclusions:

    • The developed SCL design offers a promising pathway to eliminate the need for external isolators.
    • Further improvements in resonator quality (Q-factor) and optical design can enhance reflection isolation margins.
    • This breakthrough is vital for the advancement of cost-effective and compact photonic integrated circuits.