Interface-induced transition from Schottky-to-Ohmic contact in Sc₂CO₂-based multiferroic heterojunctions

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Developing low-resistance contacts is crucial for efficient multiferroic heterojunctions.
• Two-dimensional (2D) van der Waals (vdW) materials offer unique electronic and magnetic properties.
• Scandium-based compounds are emerging as promising candidates for advanced electronic applications.

Purpose of the Study:

• To investigate Sc2CO2-based vdW heterojunctions with ferromagnetic electrodes for low-resistance contacts.
• To explore the tunability of contact properties by manipulating the polarization of Sc2CO2.
• To understand the underlying mechanisms of contact conversion and interface charge transfer.

Main Methods:

• First-principles calculations were employed to simulate and analyze the electronic and magnetic properties of the heterojunctions.
• Systematic investigation of Sc2CO2 interfaces with 1T-MnSe2, 1T-VSe2, and 1T-VTe2.
• Analysis of contact types (Schottky vs. Ohmic) and their dependence on the polarization state of Sc2CO2.

Main Results:

• A reversible transition from Schottky-to-Ohmic contact was achieved by reversing the polarization of Sc2CO2.
• This contact conversion is an intrinsic property driven by interface charge transfer.
• The conversion is independent of interlayer spacing and biaxial strain, highlighting its robustness.

Conclusions:

• Sc2CO2-based vdW heterojunctions demonstrate tunable contact properties for low-resistance applications.
• The polarization-controlled Schottky-to-Ohmic transition offers a novel pathway for designing 2D multiferroic electronics.
• This research paves the way for advanced spintronic and memory devices utilizing 2D multiferroic materials.