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Heterogeneously integrated ITO plasmonic Mach-Zehnder interferometric modulator on SOI
Rubab Amin1, Rishi Maiti1, Yaliang Gui1
1Department of Electrical and Computer Engineering, George Washington University, Washington, DC, 20052, USA.
Scientific Reports
|January 15, 2021
Summary
Researchers developed a compact, efficient, and fast Mach-Zehnder modulator using Indium Tin Oxide (ITO) integrated into silicon photonics. This breakthrough advances on-chip optical networks and photonic circuitry for next-generation applications.
Area of Science:
- Photonics and Optoelectronics
- Materials Science
- Nanotechnology
Background:
- Traditional silicon optoelectronics have weak light-matter interactions, requiring large devices.
- On-chip networks need compact and energy-efficient active photonics solutions.
- Indium Tin Oxide (ITO) offers high index modulation and silicon integration potential.
Purpose of the Study:
- To demonstrate a compact, efficient, and broadband active photonic device.
- To leverage Indium Tin Oxide (ITO) for enhanced light-matter interaction in silicon photonics.
- To enable next-generation on-chip networks and high-density photonic circuitry.
Main Methods:
- Heterogeneous integration of nanometer-thin Indium Tin Oxide (ITO) films into silicon photonics.
- Design of a compact, electrostatically tunable plasmonic phase-shifter.
- Fabrication of a Mach-Zehnder interferometric modulator utilizing hybrid plasmonic modes.
Main Results:
- Demonstrated a spectrally broadband, GHz-fast Mach-Zehnder interferometric modulator.
- Achieved a high efficiency with a VπL of 95 V μm.
- Showcased broadband operation across the telecommunication near-infrared C-band.
Conclusions:
- The developed device paradigm enables sub-wavelength, efficient, and fast modulators.
- Monolithic integration into silicon platforms opens possibilities for high-density photonic circuits.
- This technology is critical for high interconnect density in photonic neural networks and optical phased-arrays.
