Effects of MOVPE Growth Conditions on GaN Layers Doped with Germanium
Dario Schiavon1, Elżbieta Litwin-Staszewska2, Rafał Jakieła3
1Optoelectronic Devices Laboratory, Institute of High Pressure Physics, Polish Academy of Sciences, al. Sokołowska 29/37, 01-142 Warsaw, Poland.
Materials (Basel, Switzerland)
|January 16, 2021
Abstract:
The effect of growth temperature and precursor flow on the doping level and surface morphology of Ge-doped GaN layers was researched. The results show that germanium is more readily incorporated at low temperature, high growth rate and high V/III ratio, thus revealing a similar behavior to what was previously observed for indium. V-pit formation can be blocked at high temperature but also at low V/III ratio, the latter of which however causing step bunching.
