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Compliance current controlled volatile and nonvolatile memory in Ag/CoFe2O4/Pt resistive switching device
Sandeep Munjal1, Neeraj Khare1
1Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi-110016, India.
Nanotechnology
|January 20, 2021
Summary
This study demonstrates tunable resistive switching memory in a Ag/CoFe2O4/Pt device. By adjusting current compliance, researchers controlled the memory behavior between volatile and nonvolatile states, paving the way for advanced memory devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Resistive switching (RS) memory devices offer promising alternatives to conventional memory technologies.
- Controlling the volatile and nonvolatile characteristics of RS devices is crucial for diverse applications.
Purpose of the Study:
- To investigate the resistive memory effects of a Ag/CoFe2O4/Pt device.
- To achieve deterministic control over volatile and nonvolatile resistive switching behaviors by tuning the current compliance (I_CC).
Main Methods:
- Fabrication and characterization of a Ag/CoFe2O4/Pt device.
- Systematic variation of current compliance (I_CC) to observe resistive switching phenomena.
- Analysis of temperature-dependent resistance and magnetization to understand conduction mechanisms and filament formation.
Main Results:
- Volatile resistive switching with quantum conductance observed at low I_CC (10^-4 A).
- Nonvolatile bipolar resistive switching observed at intermediate I_CC (10^-2 A), attributed to Ag ion filament formation/rupture.
- High resistance state exhibits semiconducting behavior; low resistance state is Ohmic.
- Irreversible switching to low resistance state at high I_CC (10^-1 A) due to stable conducting channel formation.
- Electrochemical metallization is the dominant mechanism for both volatile and nonvolatile switching.
Conclusions:
- Current compliance is a key parameter for controlling resistive switching modes (volatile vs. nonvolatile) in Ag/CoFe2O4/Pt devices.
- The device exhibits tunable memory characteristics with a large memory window, indicating its potential for future resistive switching applications.
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