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Updated: Nov 20, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
Thiophene-based twisted bistricyclic aromatic ene with tricoordinate boron: a new n-type semiconductor
Yohei Adachi1, Takanori Nomura, Shion Tazuhara
1Applied Chemistry Program, Graduate School of Advanced Science and Engineering, Hiroshima University, Higashi-Hiroshima 739-8527, Japan. yadachi@hiroshima-u.ac.jp jo@hiroshima-u.ac.jp.
Abstract:
The incorporation of tricoordinate boron into conjugated systems is of current interest in the field of organic electronics. In this study, a tricoordinate boron-embedded thiophene-based bistricyclic aromatic ene (BAE) was synthesized as a new boron-containing conjugated system. The combination of tricoordinate boron and fused thiophene rings imposed the twisted conformation in the BAE structure, resulting in the narrow energy absorption with the low-lying LUMO. Preliminary studies on the application of the highly electron-deficient boron-embedded BAE to organic field-effect transistors (OFETs) were also performed, revealing its moderately high electron mobility.
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