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Effect of doping on the GR/MoS2/GR selector: first-principle calculations
Yuehua Dai1, Xing Li1, Bin Yang1
1School of Electronics and Information Engineering, Anhui University, Hefei(230000), People's Republic of China.
Nanotechnology
|February 5, 2021
Summary
A novel graphene (GR)/MoS2/GR selector was designed using first-principle calculations. Si-doped MoS2 significantly improved device performance, enhancing ON-state current and reducing threshold voltage for better RRAM applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Resistive switching memory (RRAM) requires efficient selectors to suppress leakage current.
- Graphene (GR) and Molybdenum Disulfide (MoS2) are promising materials for electronic devices due to their unique properties.
Purpose of the Study:
- To design and investigate a graphene/MoS2/graphene selector for improved RRAM performance.
- To explore the effects of doping MoS2 on its electronic properties and interface characteristics with graphene.
Main Methods:
- First-principle calculations were employed to simulate and analyze the electronic structure and transport properties.
- Doping MoS2 with various elements (P, Si, Ti) and forming heterostructures with graphene were investigated.
Main Results:
- Si-doped MoS2 exhibited enhanced conductivity and favorable interface properties with graphene, including reduced Schottky barrier.
- The optimized GR/MoS·Si/GR selector showed a significant increase in ON-state current and nonlinear coefficient, with a reduced threshold voltage.
Conclusions:
- The proposed GR/MoS·Si/GR selector effectively suppresses leakage current, outperforming undoped and other doped variants.
- This work provides valuable insights for designing high-performance selectors for RRAM crossbar arrays.
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