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Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs

Xiaole Jia1, Haodong Hu1, Genquan Han2

  • 1State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China.

Nanoscale Research Letters
|February 11, 2021
PubMed

Keywords:
Analytical modelGa2O3Maximum temperatureThermal conductivity

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