Analytical Model for the Channel Maximum Temperature in Ga₂O₃ MOSFETs.

Area of Science:

• Materials Science and Engineering
• Semiconductor Device Physics
• Thermal Management

Background:

• Gallium Oxide (Ga2O3) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are promising for high-power applications.
• Effective thermal management is crucial due to the anisotropic and temperature-dependent thermal conductivity of Ga2O3.
• Existing models may not fully capture the complex thermal behavior of Ga2O3 MOSFETs.

Purpose of the Study:

• To develop an accurate analytical model for estimating the maximum channel temperature in Ga2O3 MOSFETs.
• To incorporate the anisotropic and temperature-dependent thermal conductivity of Ga2O3 into the thermal model.
• To provide insights for effective thermal management strategies for Ga2O3 power devices.

Main Methods:

• Development of a novel analytical model for channel maximum temperature estimation.
• Inclusion of anisotropic and temperature-dependent thermal conductivity properties of Ga2O3.
• Validation through numerical simulations using COMSOL Multiphysics, varying device parameters and ambient temperature.

Main Results:

• The proposed analytical model accurately estimates the channel maximum temperature of Ga2O3 MOSFETs.
• Numerical simulations show good agreement with the analytical model, confirming its validity.
• The model effectively captures the influence of power density, device geometry, and ambient temperature on thermal behavior.

Conclusions:

• The developed analytical model provides a reliable tool for predicting thermal performance in Ga2O3 MOSFETs.
• The model's accuracy is validated by numerical simulations, highlighting its practical applicability.
• This work offers valuable guidance for optimizing the thermal management of Ga2O3-based power electronic devices.