Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Emerging Dual-Gate FET Sensor Paradigm for Ultra-Low Concentration Cortisol Detection in Complex Bioenvironments.

Biosensors·2025

Same author

Enhancing the Stability and Mobility of TFTs via Indium-Tungsten Oxide and Zinc Oxide Engineered Heterojunction Channels Annealed in Oxygen Ambient.

Nanomaterials (Basel, Switzerland)·2024

Same author

Enhanced BSA Detection Precision: Leveraging High-Performance Dual-Gate Ion-Sensitive Field-Effect-Transistor Scheme and Surface-Treated Sensing Membranes.

Biosensors·2024

Same author

Organic-Inorganic Hybrid Synaptic Transistors: Methyl-Silsesquioxanes-Based Electric Double Layer for Enhanced Synaptic Functionality and CMOS Compatibility.

Biomimetics (Basel, Switzerland)·2024

Same author

Smart pH Sensing: A Self-Sensitivity Programmable Platform with Multi-Functional Charge-Trap-Flash ISFET Technology.

Sensors (Basel, Switzerland)·2024

Same author

Synaptic Plasticity Modulation of Neuromorphic Transistors through Phosphorus Concentration in Phosphosilicate Glass Electrolyte Gate.

Nanomaterials (Basel, Switzerland)·2024

Search research articles

Related Experiment Video

Updated: Nov 17, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Lithography Processable Ta₂O₅ Barrier-Layered Chitosan Electric Double Layer Synaptic Transistors.

Sung-Hun Kim¹, Won-Ju Cho¹

¹Department of Electronic Materials Engineering, Kwangwoon University, 447-1, Wolgye-dong, Nowon-gu, Seoul 139-701, Korea.

International Journal of Molecular Sciences

|February 12, 2021

Summary

We developed a stable synaptic transistor using a tantalum oxide (Ta2O5) layer on chitosan for micro-neural systems. This innovation enhances mechanical stability, enabling artificial synaptic functions and neuroplasticity for advanced computing.

Keywords:

Ta2O5 a-IGZO channel chitosan electrolyte high-k barrier layer synaptic transistor

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Related Experiment Videos

Last Updated: Nov 17, 2025

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

Area of Science:

Materials Science
Neuroscience
Electrical Engineering

Background:

Single-layer organic chitosan electrolytes lack mechanical and chemical stability for lithography.
Previous synaptic transistors faced challenges with material durability and process integration.
Micro-neural architecture requires robust and stable synaptic components.

Purpose of the Study:

To develop a mechanically and chemically stable synaptic transistor.
To demonstrate artificial synaptic behaviors and neuroplasticity using a novel layered material.
To enable integration into micro-neural architecture systems.

Main Methods:

Fabrication of a synaptic transistor using a tantalum oxide (Ta2O5) barrier layer on a chitosan electric double layer (EDL).
Utilizing protonic mobile ion polarization in chitosan for artificial synaptic functions.
Implementing neuroplasticity modulation in an amorphous In-Ga-Zn-oxide (a-IGZO) channel via presynaptic stimulation.

Main Results:

Achieved stable synaptic transistor operation with enhanced mechanical/chemical resistance due to the Ta2O5 layer.
Demonstrated key synaptic behaviors including weight changes, excitatory postsynaptic current modulation, and paired-pulse facilitation.
Quantified mobile proton polarization and synaptic weight changes in response to presynaptic stimulations, confirming stable conductance modulation.

Conclusions:

The Ta2O5-layered chitosan synaptic transistor overcomes the instability of single-layer organic electrolytes.
The device exhibits stable and tunable synaptic plasticity, suitable for micro-neural systems.
This approach offers a promising pathway for advanced neuromorphic computing architectures.