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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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The effect of strain on tunnel barrier height in silicon quantum devices

Ryan M Stein1, M D Stewart2

  • 1Joint Quantum Institute, University of Maryland, College Park, Maryland 20742, USA.

Journal of Applied Physics
|February 12, 2021
PubMed

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