Updated: Oct 29, 2025

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Yanxue Hong1, A N Ramanayaka1, Ryan Stein1
1National Institute of Standards and Technology, Gaithersburg, Maryland, 20899 USA.
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Researchers developed robust metal-oxide-semiconductor (MOS) quantum dot devices for diagnostic qubits. These prototypes demonstrate quantum dot formation and enable spin qubit studies, offering a path for material intercomparison and advanced measurements.
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