Simulation and Performance Analysis of Dielectric Modulated Dual Source Trench Gate TFET Biosensor

Area of Science:

• Semiconductor Devices
• Biosensors
• Nanotechnology

Background:

• Biosensors are crucial for detecting biomolecules.
• Existing biosensor technologies face challenges in sensitivity and power consumption.
• Field-effect transistors (FETs) offer potential for sensitive biosensing applications.

Purpose of the Study:

• To propose a novel dielectric modulated double source trench gate tunnel FET (DM-DSTGTFET) biosensor.
• To enhance on-state current and enable bidirectional current using double source and trench gate structures.
• To investigate the sensitivity of the DM-DSTGTFET for biomolecule detection.

Main Methods:

• Fabrication of a DM-DSTGTFET structure with etched cavities for biomolecule interaction.
• Utilizing 2D simulations in Technology Computer-Aided Design (TCAD) for performance analysis.
• Evaluating current and threshold voltage sensitivity under low supply voltage conditions.

Main Results:

• The DM-DSTGTFET biosensor achieved a high current sensitivity of 1.38 × 10⁵.
• A threshold voltage sensitivity of 1.2 V was demonstrated.
• The device operates effectively under low supply voltage, indicating low power consumption.

Conclusions:

• The proposed DM-DSTGTFET biosensor exhibits excellent sensitivity and low power consumption.
• The device shows significant potential for sensitive and efficient biomolecule detection.
• Further research can explore advanced applications of this FET-based biosensor technology.