Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Accurate Determination of Atomic-Level Segregation at the Rare-Earth-Doped Al<sub>2</sub>O<sub>3</sub> Grain Boundary.

Nano letters·2026

Same author

Multiscale <i>in Situ</i> Analysis of the Zinc Electrodeposition Process in Aqueous Electrolytes.

ACS applied materials & interfaces·2026

Same author

3D dynamic structure of a Pt nanoparticle on SrTiO<sub>3</sub> (001) during in-situ heating atomic-resolution ADF STEM imaging.

Nature communications·2026

Same author

Increase in Comforting Behavior (Allogrooming) During Social Interaction in Male Mice Deficient for the <i>Slp</i> Gene of Complement Component C4.

Brain sciences·2026

Same author

Atomic-Scale Insights into Yttrium-Induced Grain Boundary Structure Modification in Al<sub>2</sub>O<sub>3</sub>.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2025

Same author

Scavenging methylglyoxal improves bone quality and defect healing in diabetic mice.

Bone reports·2025

Same journal

Intrinsic Superconducting Gap in Bilayer KCa<sub>2</sub>Fe<sub>4</sub>As<sub>4</sub>F<sub>2</sub> and Decoupled Monolayer FeAs.

Nano letters·2026

Same journal

Programmable Hydrogen-Assisted Chemical Vapor Deposition Growth and Bipolar Transport in Two-Dimensional MoO<sub>2</sub> Nanoflakes.

Nano letters·2026

Same journal

A Curvature-Modulated Strategy for Single-Atom Catalysts toward Reciprocal Regulation in Li-S Batteries.

Nano letters·2026

Same journal

Vacuum Pyrolysis Engineered CoSb/C Scaffold for Sodium Metal Anodes with Sodiophilic and Superionic Interphase.

Nano letters·2026

Same journal

Hexagonal SiGe Quantum Dots in Nanowires.

Nano letters·2026

Same journal

Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.

Nano letters·2026

See all related articles

Search research articles

Related Experiment Video

Updated: Nov 17, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Photoindentation: A New Route to Understanding Dislocation Behavior in Light.

Atsutomo Nakamura^1,2, Xufei Fang³, Ayaka Matsubara¹

¹Department of Materials Physics, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.

|February 17, 2021

Summary

This summary is machine-generated.

Light exposure significantly impacts zinc sulfide (ZnS) plasticity by influencing dislocation behavior. The novel photoindentation technique reveals light increases dislocation nucleation stress and reduces mobility in nanoscale semiconductors.

Keywords:

compound semiconductor dislocations flexible semiconductor light control nanoindentation transmission electron microscopy

More Related Videos

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Related Experiment Videos

Last Updated: Nov 17, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

A Novel Method for In Situ Electromechanical Characterization of Nanoscale Specimens

Published on: June 2, 2017

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

Area of Science:

Materials Science
Solid-State Physics
Nanotechnology

Background:

Single-crystal zinc sulfide (ZnS) exhibits significant plasticity under compression in darkness.
Dislocation-photoexcited carrier interactions are hypothesized to cause these plastic effects.
Existing methods for evaluating dislocation behavior in small-dimension semiconductors under specific light conditions are limited.

Purpose of the Study:

To develop and validate a novel technique for assessing dislocation behavior in ZnS under controlled light.
To quantitatively analyze the influence of light irradiation on dislocation nucleation and mobility in nanoscale ZnS.

Main Methods:

Introduction of the 'photoindentation' technique, combining nanoscale indentation with a controlled lighting system.
Quantitative data analysis of indentation tests under varying light conditions.
Room-temperature indentation creep tests to evaluate dislocation mobility.

Main Results:

Light irradiation significantly increases the first pop-in stress, indicating enhanced dislocation nucleation resistance near the surface of ZnS.
Dislocation mobility is drastically reduced at room temperature under light irradiation, as evidenced by creep tests.
The photoindentation technique provides quantitative insights into light-dependent dislocation dynamics.

Conclusions:

The photoindentation technique is effective for studying light effects on nanoscale dislocation behavior in semiconductors.
Light irradiation plays a crucial role in modulating dislocation nucleation and mobility in ZnS.
Understanding these light-semiconductor-dislocation interactions is vital for advanced, dimensionally limited semiconductor technologies.