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Updated: Nov 16, 2025

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
Published on: January 21, 2016
Observation of the antiferromagnetic spin Hall effect
Xianzhe Chen1, Shuyuan Shi2, Guoyi Shi2,3
1MOE Key Laboratory of Advanced Materials, School of Materials Science and Engineering, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, China.
Abstract:
The discovery of the spin Hall effect1 enabled the efficient generation and manipulation of the spin current. More recently, the magnetic spin Hall effect2,3 was observed in non-collinear antiferromagnets, where the spin conservation is broken due to the non-collinear spin configuration. This provides a unique opportunity to control the spin current and relevant device performance with controllable magnetization. Here, we report a magnetic spin Hall effect in a collinear antiferromagnet, Mn2Au. The spin currents are generated at two spin sublattices with broken spatial symmetry, and the antiparallel antiferromagnetic moments play an important role. Therefore, we term this effect the 'antiferromagnetic spin Hall effect'. The out-of-plane spins from the antiferromagnetic spin Hall effect are favourable for the efficient switching of perpendicular magnetized devices, which is required for high-density applications. The antiferromagnetic spin Hall effect adds another twist to the atomic-level control of spin currents via the antiferromagnetic spin structure.
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