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Controlling transport properties at LaFeO3/SrTiO3interfaces by defect engineering.
Mehwish Khalid Butt1, Hafiz Muhammad Zeeshan1, Yang Zhao1
1Shaanxi Key Laboratory of Condensed Matter Structures and Properties and MOE Key Laboratory of Materials Physics and Chemistry, School of Physical Science and Technology, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|February 26, 2021
Summary
Researchers developed new conductive oxide interfaces using pulsed laser deposition. These interfaces exhibit unique electronic properties and persistent photoconductivity, paving the way for advanced optoelectronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Conductive oxide interfaces are crucial for advanced electronic applications.
- Controlling defects at the LaFeO3/SrTiO3 interface is key to understanding its properties.
Purpose of the Study:
- To report the first formation of conductive LaFeO3/SrTiO3 interfaces.
- To investigate the role of SrTiO3 substrate defects in interface conductivity.
- To explore the optoelectronic properties of these novel interfaces.
Main Methods:
- Pulsed laser deposition (PLD) was employed to grow LaFeO3 films on SrTiO3 substrates.
- Defect engineering of the SrTiO3 surface was utilized to control interface properties.
- Electrical transport measurements at varying temperatures and light irradiation were performed.
Main Results:
- Conductive LaFeO3/SrTiO3 interfaces were successfully formed by controlling SrTiO3 defects.
- Interfaces grown on SrTiO3 substrates without terraces exhibited a two-dimensional electron gas (2DEG).
- A low-temperature resistance upturn, diminished by light, and persistent photoconductivity were observed, with a large relative resistance change of ~185.8% at 20 K.
Conclusions:
- Defect control at oxide interfaces is a viable strategy for tuning electronic properties.
- The observed persistent photoconductivity highlights the potential for optoelectronic applications.
- These findings offer fundamental insights for designing complex-oxide based devices.
