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Enhanced Rashba Spin Orbit Coupling and Magnetic Behavior at Oxide Heterointerfaces by Optical Gating.

Hang Yin1, Shuanhu Wang1, Kexin Jin1

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The Journal of Physical Chemistry Letters
|September 21, 2023
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Summary
This summary is machine-generated.

Illuminating complex oxide interfaces with light enhances magnetoresistance and induces magnetism via Rashba spin-orbit coupling, paving the way for novel all-oxide devices.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Quantum Coherence

Background:

  • Complex oxide heterointerfaces exhibit rich phenomena responsive to external stimuli.
  • Light is a powerful stimulus for manipulating carrier density and spin characteristics.
  • A clear light-magnetic correlation mechanism is needed for advanced devices.

Purpose of the Study:

  • To investigate the light-induced physical phenomena in Nd0.86Sr0.14Al0.86Ni0.14O3-SrTiO3 heterointerfaces.
  • To elucidate the intrinsic mechanism behind light-magnetic correlations.
  • To explore potential applications in multifield responding devices.

Main Methods:

  • Illumination of Nd0.86Sr0.14Al0.86Ni0.14O3-SrTiO3 heterointerfaces with 360 nm light.
  • Measurement of magnetoresistance (MR).
  • Characterization of band structure and spin-orbit coupling (SOC) effects.
  • Observation of anomalous Hall effect (AHE) and magnetic features.

Main Results:

  • Enhanced magnetoresistance (MR) observed upon illumination.
  • Light-induced band splitting and strong Rashba spin-orbit coupling (SOC) effect.
  • Emergence of magnetic properties and anomalous Hall effect (AHE) under optical gating.
  • Demonstration of optical gating controlling magnetism via Rashba SOC induced spin-orbit torque (SOT).

Conclusions:

  • Light illumination can induce significant physical phenomena, including magnetism, in complex oxide heterointerfaces.
  • Rashba spin-orbit coupling (SOC) plays a crucial role in the observed light-magnetic correlation.
  • The findings are significant for both theoretical understanding and the development of all-oxide devices.