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Updated: Nov 15, 2025

Fabricating van der Waals Heterostructures with Precise Rotational Alignment
Published on: July 5, 2019
The Impact of Interlayer Rotation on Thermal Transport Across Graphene/Hexagonal Boron Nitride van der Waals
Weijun Ren1, Yulou Ouyang1, Pengfei Jiang1
1Center for Phononics and Thermal Energy Science, China-EU Joint Lab for Nanophononics, School of Physics Science and Engineering, Tongji University, Shanghai 200092, People's Republic of China.
Adjusting the twist angle of graphene/hexagonal boron nitride (h-BN) van der Waals heterostructures significantly impacts interfacial thermal transport. Lowering the rotation angle enhances thermal conductance, revealing mechanisms for thermal management in 2D materials.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene/hexagonal boron nitride (h-BN) van der Waals (vdW) heterostructures exhibit unique Moiré patterns, attracting significant research interest.
- Understanding interfacial thermal transport is crucial for designing advanced electronic and thermal management devices.
Purpose of the Study:
- To investigate the influence of interlayer rotation angle (θ) on interfacial thermal transport in graphene/h-BN vdW heterostructures.
- To elucidate the physical mechanisms governing thermal conductance modulation by interlayer rotation.
Main Methods:
- Utilized molecular dynamics simulations to model thermal transport across graphene/h-BN interfaces.
- Analyzed the relationship between rotation angle and interfacial thermal conductance (G).
- Examined phonon transmission functions to understand the role of low-frequency phonons.
Main Results:
- Interfacial thermal conductance (G) of graphene/h-BN reached 509 MW/(m²K) at 500 K without rotation.
- G decreased monotonically with increasing rotation angle, showing a ~50% reduction at θ = 26.33°.
- Low-frequency phonons (<10 THz) dominantly contribute to G, and their transmission is reduced by interlayer rotation.
Conclusions:
- Interlayer rotation angle is a critical parameter for controlling interfacial thermal transport in graphene/h-BN heterostructures.
- Enhanced surface fluctuation and reduced low-frequency phonon transmission explain the observed decrease in thermal conductance with rotation.
- This study provides insights into manipulating thermal transport in vdW heterostructures for potential applications.
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