Doping Mo on Tungsten Oxide Thin Film and Photoelectrochemical Measurement

Tungsten oxide (WO₃) is semiconductor material which can be used for various applications. Especially, one-dimensional (1-D) nanostructured WO₃ shows the high photoelectrochemical (PEC) performance due to high surface area and short transport route of electron-hole pair. The flame vapor deposition (FVD) process is an efficient and economical method for preparation of the 1-D nanos-tructured WO₃ thin film. Molybdenum doping is a well-known method to improve the PEC performance of WO₃ by reducing band gap and increasing electrical property. In this study, we prepared the 1-D WO₃ nanostructures doped with Mo by FVD single step process. We confirmed that Mo was successfully doped on WO₃ without changing significantly the original nanostructure, crystal structure and chemical bonding state of WO₃ thin film. As a result of PEC measurement, the pho-tocurrent densities of WO₃ thin film with Mo doping were higher by about 1.4 to 2 times (for applied voltage above 0.7 V vs. SCE) than those without Mo doping.