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Correlation driven topological nodal ring ferromagnetic spin gapless semimetal: CsMnF4
Anuroopa Behatha1, Argha Jyoti Roy1, C V Anusree1
1Department of Physics, Indian Institute of Technology Hyderabad, Kandi-502285, Sangareddy, Telangana, India.
Researchers discovered in-plane ferromagnetism in CsMnF4, a layered material. This spin gapless semimetal exhibits topological nodal-ring dispersion, paving the way for advanced spintronic devices.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Spintronics
Background:
- Layered magnetic materials with topological properties are crucial for next-generation spintronic devices.
- Spin gapless semimetals offer 100% spin polarization, preventing spin leakage and enhancing device performance.
Purpose of the Study:
- Investigate the electronic and magnetic properties of the layered perovskite CsMnF4.
- Explore its potential as a topological nodal-ring spin gapless semimetal for spintronic applications.
Main Methods:
- Density Functional Theory (DFT) calculations were employed.
- DFT + U method was used to study the effect of on-site Coulomb interaction (U).
- Spin-orbit coupling (SOC) was included to analyze magneto-crystalline anisotropy.
Main Results:
- CsMnF4 transitions from an insulating to a half-semimetallic state with decreasing U.
- Topological nodal-ring dispersion with Mexican hat-like features emerged at U = 2.5 eV.
- In-plane ferromagnetism and significant transport anisotropy were observed.
Conclusions:
- CsMnF4 exhibits robust topological properties and high Fermi velocities comparable to graphene.
- The material shows potential for high-speed spin electronic and memory devices.
- Preservation of nodal rings is possible despite broken time-reversal symmetry in magnetic systems.
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