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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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Electrical Characterizations of Planar Ga2O3 Schottky Barrier Diodes

Shiyu Zhang1, Zeng Liu1,2,3, Yuanyuan Liu4,5

  • 1Laboratory of Information Functional Materials and Devices, School of Science & State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China.

Micromachines
|April 3, 2021
PubMed

Keywords:
C–VGa2O3I–VSchottky diode

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