Related Experiment Video
Updated: Nov 10, 2025

Design and Characterization Methodology for Efficient Wide Range Tunable MEMS Filters
Published on: February 4, 2018
Universal Filter Based on Compact CMOS Structure of VDDDA
Winai Jaikla1, Fabian Khateb2,3, Tomasz Kulej4
1Department of Engineering Education, Faculty of Industrial Education and Technology, King Mongkut's Institute of Technology Ladkrabang, Bangkok 10520, Thailand.
Abstract:
This paper proposes the simulated and experimental results of a universal filter using the voltage differencing differential difference amplifier (VDDDA). Unlike the previous complementary metal oxide semiconductor (CMOS) structures of VDDDA that is present in the literature, the present one is compact and simple, owing to the employment of the multiple-input metal oxide semiconductor (MOS) transistor technique. The presented filter employs two VDDDAs, one resistor and two grounded capacitors, and it offers low-pass: LP, band-pass: BP, band-reject: BR, high-pass: HP and all-pass: AP responses with a unity passband voltage gain. The proposed universal voltage mode filter has high input impedances and low output impedance. The natural frequency and bandwidth are orthogonally controlled by using separated transconductance without affecting the passband voltage gain. For a BP filter, the root mean square (RMS) of the equivalent output noise is 46 µV, and the third intermodulation distortion (IMD3) is -49.5 dB for an input signal with a peak-to peak of 600 mV, which results in a dynamic range (DR) of 73.2 dB. The filter was designed and simulated in the Cadence environment using a 0.18-µm CMOS process from Taiwan semiconductor manufacturing company (TSMC). In addition, the experimental results were obtained by using the available commercial components LM13700 and AD830. The simulation results are in agreement with the experimental one that confirmed the advantages of the filter.
Related Concept Videos
Design Example: Capacitance Multiplier Circuit
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Diode: Forward bias
The behavior of a diode in forward bias...
MOSFET Amplifiers
Diode: Reverse bias
Op Amp AC Circuits

