Related Experiment Video
Updated: Nov 9, 2025

08:50
Fabrication and Characterization of a Conformal Skin-like Electronic System for Quantitative, Cutaneous Wound Management
Published on: September 2, 2015
9.1K
Non-Hermitian Skin Effect in a Non-Hermitian Electrical Circuit
Shuo Liu1, Ruiwen Shao2, Shaojie Ma1
1School of Physics and Astronomy, University of Birmingham, Birmingham B15 2TT, UK.
Research (Washington, D.C.)
|April 7, 2021
Summary
The bulk-boundary correspondence fails in non-Hermitian systems due to the non-Hermitian skin effect. A new non-Bloch bulk-boundary condition accurately predicts topological edge states in these circuits.
Area of Science:
- Condensed Matter Physics
- Topological Materials
- Non-Hermitian Systems
Background:
- The bulk-boundary correspondence traditionally links bulk topological invariants to edge states.
- This principle is challenged in non-Hermitian systems with broken reciprocity due to the non-Hermitian skin effect (NHSE).
- NHSE causes eigenstates to localize at boundaries, invalidating conventional methods.
Purpose of the Study:
- To experimentally demonstrate a 1D non-Hermitian topological circuit with broken reciprocity.
- To investigate the failure of the conventional bulk-boundary correspondence in such systems.
- To validate a new non-Bloch bulk-boundary condition for predicting topological edge states.
Main Methods:
- Fabrication of a 1D non-Hermitian topological circuit using voltage follower modules for unidirectional coupling.
- Experimental observation of topological edge states via impedance spectra measurements under open boundary conditions (OBC).
- Comparison of circuit Laplacians under periodic boundary conditions (PBC) and OBC to confirm the breakdown of conventional bulk-boundary correspondence.
Main Results:
- Successful experimental realization of a 1D non-Hermitian topological circuit with broken reciprocity.
- Observation of topological edge states at the open circuit boundary.
- Demonstration that the conventional bulk-boundary correspondence is inapplicable in this system.
- Validation of the non-Bloch bulk-boundary condition using a non-Bloch winding number for accurate prediction of edge states.
Conclusions:
- The conventional bulk-boundary correspondence fails in non-Hermitian systems with broken reciprocity and NHSE.
- A novel non-Bloch bulk-boundary condition accurately predicts topological edge states in these systems.
- Experimental validation of theoretical predictions in a practical circuit implementation.
Related Concept Videos
Electrostatic Boundary Conditions
731
Consider an external electric field propagating through a homogeneous medium. When the electric field crosses the surface boundary of the medium, it undergoes a discontinuity. The electric field can be resolved into normal and tangential components. The amount by which the field changes at any boundary is given by the difference between the field components above and below the surface boundary.
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
The surface integral of an electric field is given by Gauss's law in integral form and is related to...
731
Non-ohmic Devices
1.3K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.3K
P-N junction
817
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
817
Norton Equivalent Circuits
579
Norton's theorem is a fundamental concept in the field of electrical engineering that allows for the simplification of complex AC circuits. The theorem states that any two-terminal linear network can be replaced with an equivalent circuit that consists of an impedance, which is parallel with a constant current source. Figure 1 shows the AC circuit portioned into two parts: Circuit A and Circuit B, while Figure 2 depicts the circuit obtained by replacing Circuit A by its Norton equivalent...
579
Electrostatic Boundary Conditions in Dielectrics
1.5K
When an electric field passes from one homogeneous medium to another, crossing the boundary between the two mediums imparts a discontinuity in the electric field. This results in electrostatic boundary conditions that depend on the type of mediums the field propagates through.
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
1.5K
Biasing of P-N Junction
1.2K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
1.2K

