Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Crystal Field Theory - Tetrahedral and Square Planar Complexes02:46

Crystal Field Theory - Tetrahedral and Square Planar Complexes

45.8K
Tetrahedral Complexes
Crystal field theory (CFT) is applicable to molecules in geometries other than octahedral. In octahedral complexes, the lobes of the dx2−y2 and dz2 orbitals point directly at the ligands. For tetrahedral complexes, the d orbitals remain in place, but with only four ligands located between the axes. None of the orbitals points directly at the tetrahedral ligands. However, the dx2−y2 and dz2 orbitals (along the Cartesian axes) overlap with the ligands less than the dxy,...
45.8K
Metallic Solids02:37

Metallic Solids

19.9K
Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
All metallic solids exhibit high thermal and electrical conductivity, metallic luster, and malleability....
19.9K
Lattice Centering and Coordination Number02:33

Lattice Centering and Coordination Number

10.6K
The structure of a crystalline solid, whether a metal or not, is best described by considering its simplest repeating unit, which is referred to as its unit cell. The unit cell consists of lattice points that represent the locations of atoms or ions. The entire structure then consists of this unit cell repeating in three dimensions. The three different types of unit cells present in the cubic lattice are illustrated in Figure 1.
Types of Unit Cells
Imagine taking a large number of identical...
10.6K
Plastic Deformations of Members with a Single Plane of Symmetry01:21

Plastic Deformations of Members with a Single Plane of Symmetry

211
When a structural member undergoes plastic deformation due to bending, it is crucial to understand the position of the neutral axis and the stress distribution. This member, characterized by a single plane of symmetry, exhibits a uniform stress distribution, with negative stress above the neutral axis and positive stress below. Notably, the neutral axis does not align with the centroid of the cross-section. This misalignment is typical in cases where the cross-section is not rectangular or...
211
Gauss's Law: Planar Symmetry01:27

Gauss's Law: Planar Symmetry

8.9K
A planar symmetry of charge density is obtained when charges are uniformly spread over a large flat surface. In planar symmetry, all points in a plane parallel to the plane of charge are identical with respect to the charges. Suppose the plane of the charge distribution is the xy-plane, and the electric field at a space point P with coordinates (x, y, z) is to be determined. Since the charge density is the same at all (x, y) - coordinates in the z = 0 plane, by symmetry, the electric field at P...
8.9K
Valence Bond Theory02:42

Valence Bond Theory

10.0K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
10.0K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same authorSame journal

Hexagonal SiGe Quantum Dots in Nanowires.

Nano letters·2026
Same author

Quantum Light Emission from GaAs<sub><i>x</i></sub>P<sub>1-<i>x</i></sub> Quantum Dots in Wurtzite GaP Nanowires.

ACS applied materials & interfaces·2026
Same author

Quantifying Strain and Its Effect on Charge Transport in Ge/Si Core/Shell Nanowires.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Electronic Structure Reorganization in MPS<sub>3</sub> via d-Shell-Selective Alkali Metal Doping.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Hexagonal Boron Nitride for Nanoscale Heat Dissipation in Electronic and Photonic Chips.

Nano letters·2026
Same author

Single-shot parity readout of a minimal Kitaev chain.

Nature·2026
Same journal

Intrinsic Superconducting Gap in Bilayer KCa<sub>2</sub>Fe<sub>4</sub>As<sub>4</sub>F<sub>2</sub> and Decoupled Monolayer FeAs.

Nano letters·2026
Same journal

Programmable Hydrogen-Assisted Chemical Vapor Deposition Growth and Bipolar Transport in Two-Dimensional MoO<sub>2</sub> Nanoflakes.

Nano letters·2026
Same journal

A Curvature-Modulated Strategy for Single-Atom Catalysts toward Reciprocal Regulation in Li-S Batteries.

Nano letters·2026
Same journal

Vacuum Pyrolysis Engineered CoSb/C Scaffold for Sodium Metal Anodes with Sodiophilic and Superionic Interphase.

Nano letters·2026
Same journal

Monolithic Axial InGaAs Quantum Dot Emitters in GaAs-Based Nanowires via Sb-Mediated Facet Engineering.

Nano letters·2026
See all related articles

Related Experiment Video

Updated: Nov 9, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.4K

Unveiling Planar Defects in Hexagonal Group IV Materials.

Elham M T Fadaly1, Anna Marzegalli2,3, Yizhen Ren1

  • 1Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands.

Nano Letters
|April 12, 2021
PubMed
Summary
This summary is machine-generated.

A newly discovered stacking fault in hexagonal group IV materials, specifically the I3 basal stacking fault, does not impede optoelectronic properties. This finding is crucial for developing integrated electronics and photonics.

Keywords:
I3 basal stacking faultNanowiresdefectshexagonal Gehexagonal Sihexagonal group IV

More Related Videos

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.4K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.1K

Related Experiment Videos

Last Updated: Nov 9, 2025

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.4K
Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.4K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.1K

Area of Science:

  • Materials Science
  • Solid-State Physics
  • Crystallography

Background:

  • Hexagonal group IV materials are essential for integrated optoelectronics.
  • High crystal quality is needed to study intrinsic material properties.
  • Structural defects can significantly impact electronic and optical characteristics.

Purpose of the Study:

  • To identify and characterize a novel partial planar defect in hexagonal group IV materials.
  • To investigate the structural and electronic properties of this defect.
  • To determine the defect's impact on the optoelectronic performance of hexagonal silicon-germanium (hex-SiGe) materials.

Main Methods:

  • Electron microscopy for defect visualization and reconstruction.
  • Atomistic modeling for structural analysis.
  • Band structure calculations and photoluminescence measurements for electronic and optical property assessment.

Main Results:

  • A previously unknown partial planar defect, a type I3 basal stacking fault, was identified.
  • The I3 defect and its terminating dislocations were visualized and reconstructed.
  • No electronic states were found within the band gap of hex-Ge and hex-Si due to the I3 defect.

Conclusions:

  • The I3 basal stacking fault is not detrimental to the optoelectronic properties of hex-SiGe materials.
  • This defect's characteristics are relevant to the hex-III-N community.
  • Understanding this defect is key for advancing integrated electronic-photonic devices.