High mobility field-effect transistors based on MoS2crystals grown by the flux method
Vilas Patil1,2, Jihyun Kim3, Khushabu Agrawal1
1School of Electronic and Electrical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Nanotechnology
|April 12, 2021
Summary
High-quality molybdenum disulphide (MoS2) crystals were grown using the flux method, significantly improving MoS2field-effect transistor performance. This technique reduces defects and enhances electron mobility for advanced electronic applications.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Two-dimensional (2D) molybdenum disulphide (MoS2) is a promising material for optical and electronic devices.
- Crystal quality, characterized by defects and grain boundaries, critically impacts MoS2 performance.
- Achieving high-quality MoS2 crystal growth remains a significant challenge.
Purpose of the Study:
- To develop a method for high-quality MoS2 crystal growth.
- To investigate the influence of crystal morphology on MoS2 field-effect transistor (FET) performance.
- To address mobility degradation in MoS2 FETs.
Main Methods:
- Employing the flux method for MoS2 crystal synthesis.
- Optimizing sulfur concentration (molar ratio of 2.2) and cooling rate (2.5 °C h-1).
- Characterizing electrical transport properties of MoS2 FETs at room temperature and 77 K, with and without hexagonal boron nitride (h-BN) dielectric.
Main Results:
- The flux method successfully produced high-quality MoS2 crystals with reduced defect density.
- Optimized synthesis parameters yielded crystals of good quality and size.
- A maximum field-effect mobility of 113 cm2V-1s-1 was achieved at 77 K for MoS2/h-BN FETs.
Conclusions:
- The flux method is effective for large-scale, high-quality MoS2 crystal growth.
- Crystal quality significantly impacts MoS2 FET performance.
- This approach is crucial for enhancing mobility in MoS2 FETs and enabling commercial applications.
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