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Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor Memory

Xiwen Liu1, Dixiong Wang1, Kwan-Ho Kim1

  • 1Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States.

Nano Letters
|April 21, 2021
PubMed

Keywords:
CMOSMoS2aluminum scandium nitrideferroelectric field effect transistormemorytwo-dimensional

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