Effects of high pressure oxygen annealing on Hf_0.5Zr_0.5O₂ferroelectric device

We report a high-pressure oxygen annealing (HPOA) process to improve the performance of TiN/Hf_0.5Zr_0.5O₂(HZO)/TiN devices by controlling the number of oxygen vacancies and carbon contaminants. The ferroelectric properties of HZO film after HPOA at 250 °C for 30 min under different oxygen pressures from 0 to 80 bar were evaluated by electrical and structural characterizations. We found that a sample treated with an oxygen pressure at 40 bar exhibited large switchable polarization (2P_r) of approximately 38 and 47μC cm^-2in its pristine and wake-up states, respectively. Compared to a control sample, an approximately 40% reduction in the wake-up effect was achieved after HPOA at 40 bar. Improved ferroelectric properties of HZO film can be explained by the appropriate amount of oxygen vacancies and reduced carbon contaminants after HPOA.