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Updated: Nov 8, 2025

Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
Three dimensional band-filling control of complex oxides triggered by interfacial electron transfer
Meng Meng1, Yuanwei Sun2, Yuehui Li2
1Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
Abstract:
The d-band-filling of transition metals in complex oxides plays an essential role in determining their structural, electronic and magnetic properties. Traditionally, at the oxide heterointerface, band-filling control has been achieved via electrostatic modification in the structure of field-effect transistors or electron transfer, which is limited to the quasi-two-dimension at the interface. Here we report a three-dimensional (3D) band-filling control by changing the local lattice coordination in a designed oxide heterostructure. At the LaCoO3/LaTiO3 heterointerface, due to the Fermi level mismatch, electrons transfer from LaTiO3 to LaCoO3. This triggers destabilisation of the CoO6 octahedrons, i.e. the formation of lattice configurations with a reduced Co valence. The associated oxygen migration results in the 3D topotactic phase transition of LaCoO3. Tuned by the thickness of LaTiO3, different crystalline phases and band-fillings of Co occur, leading to the emergence of different magnetic ground states.
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