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Published on: June 23, 2018
Construction of PtSe2/Ge heterostructure-based short-wavelength infrared photodetector array for image sensing and
Yu Lu1, Yue Wang1, Chenhao Xu1
1School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. chaoxie@ahu.edu.cn luolb@hfut.edu.cn.
Abstract:
In this work, we present the construction of a multilayered PtSe2/Ge heterostructure-based photodetector array comprising 1 × 10 device units operating in the short-wavelength infrared (SWIR) spectrum region. The as-fabricated heterostructures show an obvious photovoltaic effect, providing the devices with the ability to work as self-driven photodetectors. Upon 1550 nm illumination, a typical photodetector exhibits prominent photoresponse performance with the current on/off ratio, responsivity, external quantum efficiency and specific detectivity reaching 1.08 × 103, 766 mA W-1, 61.3% and 1.1 × 1011 Jones, respectively. The device also has a fast response speed with rise/fall times of 54.9 μs/56.6 μs. Thanks to the respectable homogeneity in device performance, the photodetector array can reliably record an image of a "diode symbol" produced by SWIR irradiation. What is more, the photodetector is successfully integrated into a SWIR optical communication system serving as an optical receiver to transmit a text signal. The above results imply a huge possibility of the present heterostructure-based photodetector array for some optoelectronic purposes such as SWIR image sensing and optical communication applications.
