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Single-spin resonance in a van der Waals embedded paramagnetic defect
Nathan Chejanovsky1,2, Amlan Mukherjee3, Jianpei Geng1
13. Physikalisches Institut, Universität Stuttgart, Stuttgart, Germany.
Nature Materials
|May 7, 2021
Summary
Researchers identified optically active spin defects in hexagonal boron nitride (hBN). These defects exhibit optically detected magnetic resonance, offering insights into their structure and dynamics for quantum applications.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Optics
Background:
- Two-dimensional van der Waals materials host numerous single-photon emitters.
- Understanding optically active spin defects is crucial for quantum technologies.
Purpose of the Study:
- To characterize optically detected magnetic resonance in isolated emitters within hexagonal boron nitride (hBN).
- To elucidate the spin properties, electronic structure, and dynamics of these defects.
Main Methods:
- Optically detected magnetic resonance (ODMR) spectroscopy.
- Analysis of photokinetics and spin relaxation times (T1, T2).
- Investigation of hyperfine coupling and its angular dependence.
Main Results:
- Identified defect spins with isotropic g-factor (~2) and low zero-field splitting (<10 MHz).
- Determined hyperfine coupling (~10 MHz) suggesting an out-of-plane delocalized π-electron.
- Measured spin-lattice relaxation times (T1) of 13-17 μs and spin coherence times (T2) < 1 μs.
Conclusions:
- The observed spin defects likely originate from substitutional impurities in hBN.
- Results provide detailed insights into the structure, composition, and dynamics of optically active spin defects.
- These findings advance the understanding of quantum emitters in 2D materials for potential quantum applications.
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