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Interfacial Gated Graphene Photodetector with Broadband Response
Zhongzheng Huang1,2, Junku Liu3, Tianfu Zhang1,2
1Department of Physics, State Key Laboratory of Low-Dimensional Quantum Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, P. R. China.
ACS Applied Materials & Interfaces
|May 10, 2021
Summary
Researchers developed highly efficient graphene photodetectors using Hafnium oxide (HfO2) for improved interfacial gating. These devices achieve high photoresponsivity and ultrabroadband detection, showing promise for optoelectronic applications.
Area of Science:
- Materials Science
- Optoelectronics
- Nanotechnology
Background:
- Graphene-based photodetectors are crucial for advanced optical sensing.
- Interfacial engineering significantly impacts photodetector performance.
- Silicon (Si) and amorphous Molybdenum Disulfide (a-MoS2) are common photodetector materials.
Purpose of the Study:
- To investigate the enhanced interfacial gating effect in graphene/HfO2/Si photodetectors.
- To develop ultrabroadband photodetectors utilizing the interfacial gating mechanism.
- To assess the potential of these photodetectors for optoelectronic applications.
Main Methods:
- Fabrication of graphene/HfO2/Si, graphene/HfO2/Ge, and graphene/HfO2/a-MoS2 photodetectors.
- Characterization of interfacial properties and device performance (photoresponsivity, response time).
- Utilizing the interfacial gating mechanism for enhanced photodetection.
Main Results:
- Graphene/HfO2/Si photodetectors exhibited a stronger interfacial gating effect than graphene/SiO2/Si devices due to higher interface state density and HfO2 dielectric constant.
- Graphene/HfO2/Si photodetector achieved a high photoresponsivity of 45.8 A W-1.
- The graphene/HfO2/a-MoS2 photodetector demonstrated ultrabroadband detection (473 nm to 2712 nm) with a photoresponsivity of 5.36 A W-1 and a fast response time of 68 μs.
Conclusions:
- The interfacial gating mechanism significantly enhances photodetector performance, enabling fast response, high photoresponsivity, and ultrabroadband detection.
- The developed photodetectors are fabricated simply and are compatible with semiconductor processes.
- These interfacial gated graphene photodetectors hold great potential for diverse electronic and optoelectronic applications.
