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A High-Sensitivity Charge Sensor for Silicon Qubits above 1 K.

Jonathan Yue Huang1, Wee Han Lim1, Ross C C Leon1

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A novel double-island single-electron transistor (SET) improves charge sensor signal-to-noise ratio by 10x for silicon spin qubits. This enables high-fidelity quantum computing readout at higher temperatures (up to 8K).

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Area of Science:

  • Quantum Computing
  • Solid-State Physics
  • Nanotechnology

Background:

  • Silicon spin qubits show promise for relaxed cooling requirements in quantum computing (above 1K).
  • Standard charge sensing using single-island single-electron transistors (SISETs) suffers from reduced sensitivity at higher temperatures due to thermal electron broadening.

Purpose of the Study:

  • To develop an improved charge sensor for silicon spin qubits.
  • To enhance signal-to-noise ratio and fidelity of qubit readout at elevated temperatures (few-kelvin range).

Main Methods:

  • Exploited quantum tunneling between two quantized states in a double-island single-electron transistor (SET).
  • Performed theoretical modeling of temperature-dependent current transport in both SISETs and double-island SETs.
  • Experimentally demonstrated and characterized the performance of the double-island SET as a charge sensor.

Main Results:

  • Achieved an order of magnitude improvement in signal-to-noise ratio compared to standard SISETs.
  • Demonstrated single-shot charge readout fidelity exceeding 99% up to 8 Kelvin.
  • Operated the sensor at a bandwidth greater than 100 kHz.

Conclusions:

  • The double-island SET offers a significant advancement for charge sensing in silicon quantum computing.
  • This sensor technology enables high-fidelity qubit readout at few-kelvin temperatures, relaxing stringent cooling demands.
  • Minimal hardware modifications allow integration into existing qubit architectures.