Ferromagnetism
Biasing of Metal-Semiconductor Junctions
Biasing of P-N Junction
Dielectric Polarization in a Capacitor
Magnetic Field Due to Two Straight Wires
Induced Electric Dipoles
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Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Wentao Xu1,2, Lihua Wang3, David ChangMo Yang3
1Department of Materials Science and Engineering, Institute of Engineering Research, Research Institute of Advanced Materials, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea.
Researchers discovered ferroelectric nanowires (FNWs) exhibiting four polarization states, enabling quaternary-digit data storage. This moves beyond traditional binary ferroelectricity for novel electronic devices.
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