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Focused Ion Beam Lithography to Etch Nano-architectures into Microelectrodes
Published on: January 19, 2020
Detectors Array for In Situ Electron Beam Imaging by 16-nm FinFET CMOS Technology
Chien-Ping Wang1, Burn Jeng Lin2, Jiaw-Ren Shih1
1Institute of Electronics Engineering, National Tsing Hua University, Hsinchu, Taiwan.
Abstract:
A novel in situ imaging solution and detectors array for the focused electron beam (e-beam) are the first time proposed and demonstrated. The proposed in-tool, on-wafer e-beam detectors array features full FinFET CMOS logic compatibility, compact 2 T pixel structure, fast response, high responsivity, and wide dynamic range. The e-beam imaging pattern and detection results can be further stored in the sensing/storage node without external power supply, enabling off-line electrical reading, which can be used to rapidly provide timely feedback of the key parameters of the e-beam on the projected wafers, including dosage, accelerating energy, and intensity distributions.

